ST1413A p channel enhancement mode mosfet 3.4a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com ST1413A 2005. v1 description ST1413A is the pchannel logic enhancement mode pow er field effect transistor which is produced using high cell density, dmos trench techn ology.this high density process is especially tailored to minimize onstate resistance .these devices are particularly suited for low voltage application such as cellular phone and notebook computer power management, other battery powered circuits, and low inline po wer loss are required. the product is in a very small outline surface mount package. pin configuration sot-353 ( sc-70-5l ) feature - 20v/3.4a, r ds(on) = 130m @v gs = 4.5v 20v/2.0a, r ds(on) = 150m @v gs = 2.5v super high density cell design for extremely low r ds(on) exceptional onresistance and maximum dc current capability sot353 package design
ST1413A p channel enhancement mode mosfet 3.4a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com ST1413A 2005. v1 absoulte maximum ratings (ta = 25 unless otherwise noted ) parameter symbol typical unit drainsource voltage v dss 20 v gatesource voltage v gss 12 v continuous drain current (tj=150 ) t a =25 t a =70 i d 3.4 2.0 a pulsed drain current i dm 7 a continuous source current (diode conduction) i s 1.6 a power dissipation t a =25 t a =70 p d 1.25 0.8 w operation junction temperature t j 150 storage temperature range t stg 55/150 thermal resistancejunction to ambient r ja 105 /w
ST1413A p channel enhancement mode mosfet 3.4a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com ST1413A 2005. v1 electrical characteristics ( ta = 25 unless otherwise noted ) parameter symbol condition min typ max unit static drainsource breakdown voltage v (br)dss v gs =0v,i d =250ua 20 v gate threshold voltage v gs(th) v ds =vgs,i d =250ua 0.4 1.0 v gate leakage current i gss v ds =0v,v gs = 12v 100 na v ds =20v,v gs =0v 1 zero gate voltage drain current i dss v ds =20v,v gs =0v t j =55 5 ua onstate drain current i d(on) v ds Q 5v,v gs =4.5v v ds Q 5v,v gs =2.5v 6 3 a drainsource onresistance r ds(on) v gs =4.5v,i d =3.4a v gs =2.5v,i d =2.4a 0.100 0.130 0.130 0.150 forward transconductance g fs v ds =1.8v,i d =2.8v 6.5 s diode forward voltage v sd i s =1.6a,v gs =0v 0.8 1.2 v dynamic total gate charge q g 4.8 8 gatesource charge q gs 1.0 gatedrain charge q gd v ds =6v v gs =4.5v i d 2.8a 1.0 nc input capacitance c iss 485 output capacitance c oss 85 reverse transfer capacitance c rss v ds =6v v gs =0v f=1mh z 87 pf 11 17 turnon time t d(on) tr 13 20 18 25 turnoff time t d(off) tf v dd =6v r l =6 i d =1a v gen =4.5v r g =6 15 20 ns
ST1413A p channel enhancement mode mosfet 3.4a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com ST1413A 2005. v1 typical characterictics
ST1413A p channel enhancement mode mosfet 3.4a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com ST1413A 2005. v1 typical characterictics
ST1413A p channel enhancement mode mosfet 3.4a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com ST1413A 2005. v1 typical characterictics
ST1413A p channel enhancement mode mosfet 3.4a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com ST1413A 2005. v1 sot-23-3l package outline
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